Impurity-assisted interlayer exchange coupling across a tunnel barrier.
نویسندگان
چکیده
Localized impurity or defect states in the insulating barrier layer separating two ferromagnetic films affect dramatically the interlayer exchange coupling (IEC), making it significantly stronger compared to perfect barriers. We demonstrate that the impurity-assisted IEC becomes antiferromagnetic if the energy of the impurity states matches the Fermi energy and that the coupling strength decreases with temperature. These results explain available experimental data on the IEC across tunnel barriers.
منابع مشابه
Effect of oxygen vacancies on interlayer exchange coupling in Fe/MgO/Fe tunnel junctions
We have investigated the interlayer exchange coupling (IEC) in Fe/MgO/Fe(0 0 1) tunnel junctions with and without oxygen vacancies in MgO, using model and density functional calculations. The model predicts that IEC changes sign from ferromagnetic to antiferromagnetic if a defect level matches the Fermi energy. Ab initio calculations show that for perfect junctions, IEC is ferromagnetic and dec...
متن کاملInterlayer exchange coupling across a ferroelectric barrier.
A new magnetoelectric effect is predicted originating from the interlayer exchange coupling between two ferromagnetic layers separated by an ultrathin ferroelectric barrier. It is demonstrated that ferroelectric polarization switching driven by an external electric field leads to a sizable change in the interlayer exchange coupling. The effect occurs in asymmetric ferromagnet/ferroelectric/ferr...
متن کاملEffect of interlayer exchange coupling parameter on switching time and critical current density in composite free layer
Articles you may be interested in Interlayer exchange coupled composite free layer for CoFeB/MgO based perpendicular magnetic tunnel junctions J. Thermal stability and spin-transfer switchings in MgO-based magnetic tunnel junctions with ferromagnetically and antiferromagnetically coupled synthetic free layers Appl. Effect of interlayer coupling in CoFeB/Ta/NiFe free layers on the critical switc...
متن کاملVoltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions
Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magne...
متن کاملTemperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers
Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 94 2 شماره
صفحات -
تاریخ انتشار 2005